PART |
Description |
Maker |
MG300Q2YS65H |
300 A, 1200 V, N-CHANNEL IGBT IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor Toshiba Corporation
|
SK30GH12306 SK30GH123 |
IGBT Module IGBT模块 IGBT Module 33 A, 1200 V, N-CHANNEL IGBT
|
Semikron International
|
MG100Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
|
PSHI50D-12 PSHI50D_12 PSHI50D/12 PSHI50D12 |
IGBT Module IGBT Module Short Circuit SOA Capability
|
Powersem GmbH
|
PSHI50D-06 PSHI50D_06 PSHI50D/06 PSHI50D06 |
IGBT Module IGBT Module Short Circuit SOA Capability
|
Powersem GmbH
|
BSM75GD120DN2 075D12N2 C67070-A2516-A67 |
IGBT Power Module (Solderable Power module 3-phase full-bridge Including fast free-wheel diodes) 103 A, 1200 V, N-CHANNEL IGBT From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
IXGE75N100Z IXGE50N90Z IXTE9N65X4U IXGE50N50Z |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 75A I(C) TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 900V V(BR)CES | 50A I(C) TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 650V V(BR)DSS | 9A I(D) 晶体管| MOSFET功率模块|独立|650V五(巴西)直| 9A条(丁) TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 500V V(BR)CES | 50A I(C) 晶体管| IGBT功率模块|独立| 500V五(巴西)国际消费电子展| 50A条一(c
|
IXYS, Corp.
|
GP1600FSM18 |
Hi-Reliability Single Switch IGBT Module 1600 A, 1800 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd. DYNEX[Dynex Semiconductor]
|
CPV363M4KPBF |
IGBT SIP Module (Short Circuit Rated Ultrafast IGBT)
|
Vishay Siliconix
|
GP800DDM12 |
Hi-Reliability Dual Switch IGBT Module Advance Information 800 A, 1200 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd. Dynex Semiconductor Ltd. DYNEX[Dynex Semiconductor]
|
GP800NSM33 |
Hi-Reliability Single Switch IGBT Module Preliminary Information 800 A, 3300 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd. Dynex Semiconductor Ltd. DYNEX[Dynex Semiconductor]
|